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​プレーナートランジスタの発明者、
ロバート・ノイス博士の肖像を背に、
左からコロラド大アロージョ教授、
シンメトリクス社Co-CEOマクミラン
博士と。インテル パロ・アルト研究所
にて（2003年）
嶋田恭博の主要業績

【１】学術誌掲載論文

 

（筆頭共著論文）

  1. Y. Shimada, K. Wani, and Y. Ogata, “Pressure-controlled wavelength stabilization of a KrF excimer laser with narrowed bandwidth,” Jpn. J. Appl. Phys. 28, 2354-2356 (1989).

  2. 嶋田恭博、和迩浩一、三升睦己、河原英仁、三木忠明、尾形芳郎、“マルチミラ－共振器を用いた狭帯域ＫｒＦエキシマレ－ザ－,”　光学 第１９巻, 109-112 (1990).

  3. Y. Shimada, K. Wani, T. Miki, H. Kawahara, M. Mimasu, and Y. Ogata, “Spectrally narrowed lasing of a self-injection KrF excimer laser,” in Excimer Lasers and Applications II, T. Letardi, ed., Proc. SPIE 1278, pp.60-64 (1990).

  4. Y. Shimada, T. Miki, M. Mimasu, N. Kosugi, and Y. Ogata, “Output characteristics of a KrF laser dependent on the F2 absorption in inactive regions,” Jpn. J. Appl. Phys. 31, 2463-2464 (1992).

  5. Y. Shimada, Y. Nagano, E. Fujii, M. Azuma, Y. Uemoto, T. Sumi, Y. Judai, S. Hayashi, N. Moriwaki, J. Nakane, T. Otsuki, C. A. Paz de Araujo, and L. D. McMillan, “Integration technology of ferroelectrics and the performance of the integrated ferroelectrics,” Integrated Ferroelectrics 11, 229-245 (1995).

  6. Y. Shimada, A. Inoue, T. Nasu, K. Arita, Y. Nagano, A. Matsuda, Y. Uemoto, E. Fujii, M. Azuma, Y. Oishi, S. Hayashi, and T. Otsuki, “Temperature-dependent current-voltage characteristics of fully processed Ba0.7Sr0.3TiO3capacitors integrated in a silicon device,” Jpn. J. Appl. Phys. 35, 140-143 (1996).

  7. Y. Shimada, A. Inoue, T. Nasu, Y. Nagano, A. Matsuda, K. Arita, Y. Uemoto, E. Fujii, and T. Otsuki, “Time-dependent leakage current behavior of integratedBa0.7Sr0.3TiO3 thin film capacitors during stressing,” Jpn. J. Appl. Phys. 35, 4919-4924 (1996).

  8. Y. Shimada, K. Nakao, A. Inoue, M. Azuma, Y. Uemoto, E. Fujii, and T. Otsuki, “Temperature effects on charge retention characteristics of integrated SrBi2(Ta,Nb)2O9 capacitors,” Appl. Phys. Lett. 71, 2538-2540 (1997).

  9. Y. Shimada, M. Azuma, K. Nakao, S. Chaya, N. Moriwaki, and T. Otsuki, “Retention characteristics of a ferroelectric memory based on SrBi2(Ta,Nb)2O9,” Jpn. J. Appl. Phys. 36, 5912-5916 (1997).

  10. Y. Shimada, M. Azuma, K. Nakao, S. Chaya, N. Moriwaki, and T. Otsuki, “Empirical reliability models of retention failures in a ferroelectric memory device using SrBi2(Ta,Nb)2O9,” Integrated Ferroelectrics 17, 45-55 (1997).

  11. Y. Shimada, A. Noma, K. Nakao, and T. Otsuki, “Thermal aging effect in poled ferroelectric SrBi2(Ta,Nb)2O9 capacitors,” Jpn. J. Appl. Phys. 38, 2816-2819 (1999).

  12. Y. Shimada, K. Arita, E. Fujii, T. Nasu, Y. Nagano, A. Noma, Y. Izutsu, K. Nakao, K. Tanaka, T. Yamada, Y. Uemoto, K. Asari, G. Nakane, A. Inoue, T. Sumi, S. Chaya, T. Nakakuma, H. Hirano, Y. Judai, Y. Sasai, and T. Otsuki, “Advanced LSI embedded with FeRAM for contactless IC cards and its manufacturing technology,” Integrated Ferroelectrics 27, 291-314 (1999).

  13. Y. Shimada, K. Arita, Y. Kato, K. Uchiyama, V. Joshi, and M. Lim, “A read-disturb-free ferroelectric gate FET memory,” Integrated Ferroelectrics 34, 27-36 (2001).

  14. Y. Shimada, Y. Kato, T. Yamada, K. Tanaka, T. Otsuki, Z. Chen, M. Lim, V. Joshi, L. McMillan, and C. Paz de Araujo, “High density and long retention non-destructive readout FeRAM using a linked cell architecture,” Integrated Ferroelectrics 40, 41-54 (2001).

 

 

（共著論文）

  1. 小杉直貴、嶋田恭博、三木忠明、松田明治、和迩浩一、“極性交互反転放電方式KrFレーザ”、放電研究　第137号, 70-78　(1992年10月).

  2. K. Arita, E. Fujii, Y. Shimada, Y. Uemoto, M. Azuma, S. Hayashi, T. Nasu, A. Inoue, A. Matsuda, Y. Nagano, S. Katsu, T. Otsuki, G. Kano, L. D. McMillan, and C. A. Paz de Araujo, “Application of ferroelectric thin films to Si devices,” IEICE Trans. Electron. E77-C, 392-398 (1994).

  3. K. Arita, E. Fujii, Y. Shimada, Y. Uemoto, T. Nasu, A. Inoue, A. Matsuda, T. Otsuki, and N. Suzuoka, “Si LSI process technology for integrated ferroelectric capacitors,” Jpn. J. Appl. Phys. 33, 5397-5399 (1994).

  4. T. Sumi, Y. Judai, K. Hirano, T. Ito, T. Mikawa, M. Takeo, M. Azuma, S. Hayashi, Y. Uemoto, K. Arita, T. Nasu, Y. Nagano, A. Inoue, A. Matsuda, E. Fujii, Y. Shimada, and T. Otsuki, “Ferroelectric nonvolatile memory technology and its applications,” Jpn. J. Appl. Phys. 35, 1516-1520 (1996).

  5. R. E. Jones, Jr., P. Y. Chu, B. Jiang, B. M. Melnick, D. J. Taylor, B. E. White, Jr., S. Zafar, D. Price, P. Zurcher, S. J. Gillespie, T. Otsuki, T. Sumi, Y. Judai, Y. Uemoto, E. Fujii, S. Hayashi, N. Moriwaki, M. Azuma, Y. Shimada, K. Arita, H. Hirano, J. Nakane, T. Nakakuma, and G. Kano, “Non-volatile memories using SrBi2(Ta,Nb)2O9 ferroelectrics” Integrated Ferroelectrics 17, 21-30 (1997).

  6. K. Asari, H. Hirano, T. Honda, T. Sumi, M. Takeo, N. Moriwaki, G. Nakane, T. Nakakuma, S. Chaya, T. Mukunoki, Y. Judai, M. Azuma, Y. Shimada, and T. Otsuki, “Ferroelectric memory circuit technology and the application to contactless IC card,” IEICE Trans. Electron. E81-C, 488-496 (1998).

  7. K. Nakao, Y. Judai, M. Azuma, Y. Shimada, and T. Otsuki, “Voltage shift effect on retention failure in ferroelectric memories,” Jpn. J. Appl. Phys. 37, 5203-5206 (1998).

  8. K. Uchiyama, K. Arita, Y. Shimada, S. Hayashi, E. Fujii, T. Otsuki, N. Solayappan, C. A. Paz de Araujo, “Low temperature crystallization of SrBi2Ta2O9 (SBT) films,” Integrated Ferroelectrics 30, 103-110 (2000).

  9. K. Uchiyama, M. Kazumura, Y. Shimada, T. Otsuki, N. Solayappan, V. Joshi, C. A. Paz de Araujo, “New technologies for future FeRAMs,” Ferroelectrics vol. 1, (Frontiers in Research Trends in Physics, The Stefan University Press, La Jolla, USA), pp.125-134 June (2001); the outgrowth of the Frontier Research Conference: SCIENCE and TECHNOLOGY of FERROELECTRIC MATERIALS, January 24-26, 2000, La Jolla, CA.

  10. E. Fujii, Y. Judai, T. Ito, T. Kutsunai, Y. Nagano, A. Noma, T. Nasu, Y. Izutsu, T. Mikawa, H. Yasuoka, M. Azuma, Y. Shimada, Y. Sasai, K. Sato, and T. Otsuki, “A highly reliable ferroelectric memory technology with SrBi2Ta2O9-based material and metal covering cell structure,” IEEE Trans. Electron Devices 48, 1231-1236 (2001).

  11. K. Tanaka, M. Azuma, Y. Shimada, T. Otsuki, and C. A. Paz de Araujo, “The size effect of the polarization of SrBi2Ta2-xNbxO9 capacitor,” in Mater. Res. Soc. Symp. Proc. 672, San Francisco, CA, April 2001, pp. O9.6.1-6.

  12. K. Uchiyama, K. Tanaka, Y. Shimada, M. Azuma, T. Otsuki, N. Solayappan, V. Joshi, and C. A. Paz de Araujo, “Low temperature crystallization of MOCVD deposited SrBi2Ta2O9 (SBT) films,” Integrated Ferroelectrics 36, 119-126 (2001).

  13. K. Tanaka, K. Uchiyama, M. Azuma, Y. Shimada, T. Otsuki, V. Joshi, and C. A. Paz de Araujo, “MOD preparation and characterization of BLT thin film,” Integrated Ferroelectrics 36, 183-190 (2001).

  14. Y. Kato, T. Yamada, and Y. Shimada, “0.18-μm nondestructive readout FeRAM using charge compensation technique,” IEEE Trans. Electron Devices 52, 2616-2621 (2005).

  15. S. Koyama, Y. Kato, T. Yamada, and Y. Shimada, “Improvement in non-destructive readout reliability of FeRAM with asymmetrical programming,” Integrated Ferroelectrics 82, 81-90 (2006).

  16. S. Koyama, Y. Kato, T. Yamada, and Y. Shimada, “Fast pulse driving of ferroelectric SBT capacitors in a nonvolatile latch,” IEICE Trans. Electron., E89-C, No. 9, 1368-1372 (2006).

  17. Y. Kato, Y. Kaneko, H. Tanaka, K. Kaibara, S. Koyama, K. Isogai, T. Yamada, and Y. Shimada, “Overview and future challenge of ferroelectric random access memory technologies,” Jpn. J. Appl. Phys. 46, 2157-2163 (2007).

  18. K. Kaibara, K. Tanaka, K. Uchiyama, Y. Kato, and Y. Shimada, “Electron backscatter diffraction analysis for polarization of SrBi2(Ta,Nb)2O9 ferroelectric capacitors in submicron small area,” Jpn. J. Appl. Phys. 47, 262-265 (2008). 

  19. Y. Kato, Y. Kaneko, H. Tanaka, and Y. Shimada, “Nonvolatile memory using epitaxially grown composite-oxide-film technology,” Jpn. J. Appl. Phys. 47, 2719-2724 (2008).

  20. Shinzo Koyama, Keisuke Tanaka, Mitsuru Muguruma, Manabu Usuda, Kazuo Fujiwara, Toshinobu Matsuno, Yutaka Hirose and Yasuhiro Shimada, “A day and night MOS imager spectrally adjusted for a wide range of color temperatures,” Vol. 7249 72490S-1-8 2009.pdf">SPIE-IS&T, Vol. 7249, 72490S1-8, 2009.

 

​

【２】国際会議論文

 

（基調講演論文）

  1. Y. Shimada, T. Otsuki, T. Sumi, E. Fujii, Y. Judai, Y. Sasai, K. Sato, L. D. McMillan, and C. A. Paz de Araujo, “FeRAM integration technology, today and tomorrow (keynote speech),” The 12th International Symposium on Integrated Ferroelectrics, Aachen, March 2000.

  2. Y. Shimada, “FeRAM: Next generation challenges and future directions (keynote speech),” The 16th IEEE International Symposium on the Applications of Ferroelectrics, Nara, May 2007.

 

（招待講演論文）

  1. Y. Shimada, Y. Nagano, E. Fujii, M. Azuma, Y. Uemoto, T. Sumi, Y. Judai, S. Hayashi, N. Moriwaki, J. Nakane, T. Otsuki, C. A. Paz de Araujo, and L. D. McMillan, “Integration technology of ferroelectrics and the performance of the integrated ferroelectrics (invited paper),” The 7th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 1995.

  2. T. Otsuki, T. Sumi, E. Fujii, Y. Judai, Y. Shimada, N. Moriwaki, Y. Uemoto, M. Azuma, S. Hayashi, Y. Oishi, K. Arita, A. Inoue, Y. Nagano, A. Matsuda, T. Nasu, L. D. McMillan, and C. A. Paz de Araujo, “Ferroelectric thin film and the integration technology (invited paper),” 1995 MOCVD Workshop for Silicon Processing, Kyungju, Korea, July 1995. 

  3. E. Fujii, T. Otsuki, Y. Shimada, M. Azuma, Y. Uemoto, S. Hayashi, T. Sumi, Y. Judai, N. Moriwaki, and J. Nakane, “Integration technology of ferroelectric thin films and its application to Si devices (invited paper),” The 8th International Symposium on Integrated Ferroelectrics, Tempe, AZ, March 1996.

  4. Y. Shimada, K. Arita, E. Fujii, T. Nasu, Y. Nagano, A. Noma, Y. Izutsu, K. Nakao, K. Tanaka, T. Yamada, Y. Uemoto, K. Asari, G. Nakane, A. Inoue, T. Sumi, S. Chaya, T. Nakakuma, H. Hirano, Y. Judai, Y. Sasai, and T. Otsuki, “Advanced LSI embedded with FeRAM for contactless IC cards and its manufacturing technology (invited paper),” The 11th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 1999. 

  5. K. Uchiyama, M. Kazumura, Y. Shimada, T. Otsuki, N. Solayappan, V. Joshi, C. A. Paz de Araujo, “New technologies for future FeRAMs (invited paper),” Science and Technology of Ferroelectric Materials, Frontier-Science Research Conferences, La Jolla CA, January 2000.

  6. Y. Shimada, Y. Kato, and T. Yamada, “A critical review and future prospects of non-destructive readout ferroelectric gate FET memories (invited paper),” The 15th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 2003, p.126.

  7. Yoshihisa Kato, Hiroyuki Tanaka, Kazunori Isogai, Kazuhiro Kaibara, Yukihiro Kaneko, Yasuhiro Shimada, Matt Brubaker, Jolanta Celinska, Larry D. McMillan, and Carlos A. Paz de Araujo, “Embedded FeRAM Challenges in the 65-nm Technology Node and Beyond (invited paper),” The 15th IEEE International Symposium on the Applications of ferroelectrics, Wed. 10:45am, Ferroelectric Memory, Sunset Beach, NC, August 2006.

  8. Y. Kato, H. Tanaka, K. Isogai, K. kaibara, Y. Kaneko, and Y. Shimada, “Overview and future challenge of FeRAM technologies (invited paper),” International Conference on Solid State Devices and Materials, F-1-1, Yokohama, September 2006, pp.120-121.

  9. Y. Shimada, “FeRAM: Next generation challenges and future directions (invited paper),” SEMI Technology Symposium 2007, Session I: Memory, Makuhari, December 2007, pp. 1.33-1.39.

  10. H. Tanaka, Y. Kaneko, Y. Kato, and Y. Shimada, “Ferroelectric memory technology challenges (invited paper),” The 7th Korea-Japan Conference on Ferroelectricity, I-09-03, Cheju International Center, Korea, August 6-9, 2008, p. 21.

 

（査読つき国際会議論文）

  1. Y. Shimada, K. Wani, and Y. Ogata, “Pressure controlled wavelength stabilization of a KrF excimer laser with narrowed bandwidth,” 1989 International MicroProcess Conference, A-2-2, Kobe, July 1989.

  2. Y. Shimada, K. Wani, T. Miki, H. Kawahara, M. Mimasu, and Y. Ogata “Spectrally narrowed lasing of a self-injection KrF excimer laser,” The International Congress on Optical Science & Engineering 1990, Excimer Lasers and Applications II, 1278-09, The Hague, March 1990.

  3. T. Sato, T. Ono, T. Miyata, M. Yamamoto, S. Aoki, H. Nagano, S. Kaino, S. Kimura, S. Mizuguchi, Y. Yamamoto, M. Sasago, N. Nomura, and Y. Shimada, “KrF laser lithography system for sub-half micron devices,” 1991 International MicroProcess Conference, A-6-7, Kanazawa, June 1991.

  4. Y. Shimada, T. Miki, N. Kosugi, and K. Wani, “Influence on the output of losses in active and inactive regions in a discharge-pumped KrF laser,”1992 Conference on Lasers and Electro-Optics '92, CTuD4, Anaheim, November 1992.

  5. N. Kosugi, Y. Shimada, T. Miki, and K. Wani, “Alternate inversion of discharge polarity of a KrF laser by using saturable inductors,” 1992 Conference on Lasers and Electro-Optics '92, CTuD5, Anaheim, November 1992.

  6. E. Fujii, Y. Uemoto, S. Hayashi, T. Nasu, Y. Shimada, A. Matsuda, M. Kibe, M. Azuma, T. Otsuki, G. Kano, M. Scott, L. D. McMillan, and C. A. Paz de Araujo, “ULSI DRAM technology with Ba0.7Sr0.3TiO3 film of 1.3 nm equivalent SiO2 thickness and 10-9 A/cm2 leakage current,” IEEE International Electron Devices Meeting '92, San Francisco, CA, December 1992, pp. 267-270.

  7. S. Hayashi, M. Huffman, M. Azuma, Y. Shimada, T. Otsuki, G. Kano, L. McMillan, and C. Paz de Araujo, “Gigabit-scale DRAM capacitor technology with high dielectric constant thin films by a novel conformal deposition technique,” Symposium on VLSI Technology 1994, 11.3, Honolulu HI, June 1994.

  8. S. Hayashi, M. Azuma, Y. Uemoto, Y. Shimada, T. Otsuki, M. Huffman, M. Scott, L. D. McMillan, and C. A. Paz de Araujo, “Preparation and characterization of ferroelectric thin films by LSMCVD,” MRS 1994 Fall Meeting, Ferroelectric thin films IV, Boston, MA, November 1994.

  9. M. Azuma, T. Nasu, M. Kibe, Y. Uemoto, A. Inoue, Y. Shimada, E. Fujii, T. Otsuki, G. Kano, M. Scott, L. D. McMillan, and C. A. Paz de Araujo, “Optimized c-axis oriented strontium bismuth tantalate grown from metal organic deposition (MOD) solutions,” The 7th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 1995.

  10. S. Hayashi, Y. Oishi, Y. Shimada, T. Mikawa, T. Otsuki, L. D. McMillan, G. F. Derbenwick, and C. A. Paz de Araujo, “Characterization of SrBi2Ta2O9 thin film capacitors on Pt/TiOx electrodes by misted deposition technique,” The 8th International Symposium on Integrated Ferroelectrics, Tempe, AZ, March 1996.

  11. Y. Shimada, A. Inoue, T. Nasu, K. Arita, Y. Nagano, A. Matsuda, Y. Uemoto, and E. Fujii, “Time-dependent leakage current behavior of integrated Ba0.7Sr0.3TiO3 thin film capacitors during stressing,” at the International Session of The 13th Ferroelectric Material Applications, 29-I-16, Kyoto, May 1996.

  12. K. Arita, Y. Shimada, Y. Uemoto, S. Hayashi, M. Azuma, Y. Judai, T. Sumi, E. Fujii, T. Otsuki, L. D. McMillan, and C. A. Paz de Araujo, “Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials,” Proceedings of the 10th IEEE International Symposium on the Applications of Ferroelectrics, East Brunswick, NJ, August 1996, pp.13-16.

  13. Y. Shimada, M. Azuma, K. Nakao, S. Chaya, N. Moriwaki, and T. Otsuki, “Empirical reliability models of retention failures in a ferroelectric memory device using SrBi2(Ta,Nb)2O9,” The 9th International Symposium on Integrated Ferroelectrics, Santa Fe, NM, March 1997.

  14. M. Azuma, M. Takeo, Y. Shimada, and T. Otsuki, “Switching characteristics of bismuth layered structure ferroelectrics,” The 9th International Symposium on Integrated Ferroelectrics, Santa Fe, NM, March 1997.

  15. R. E. Jones, P. Y. Chu, B. Jiang, B. M. Melnick, D. J. Taylor, B. E. White, S. Zafar, D. Price, P. Zurcher, S. J. Gillespie, T. Otsuki, T. Sumi, Y. Judai, Y. Uemoto, E. Fujii, S. Hayashi, N. Moriwaki, M. Azuma, Y. Shimada, K. Arita, H. Hirano, J. Nakane, T. Nakakuma, and G. Kano, “Non-volatile memories using SrBi2(Ta,Nb)2O9 ferroelectrics,” The 9th International Symposium on Integrated Ferroelectrics, Santa Fe, NM, March 1997.

  16. S. Hayashi, K. Arita, Y. Shimada, E. Fujii, T. Otsuki, and C. A. Paz de Araujo, “Ultra thin (< 70nm) layered perovskites for megabit-scale FeRAMs in the 1.5V regime,” The 9th International Symposium on Integrated Ferroelectrics, Santa Fe, NM, March 1997, p.11.3.

  17. A. Inoue, Y. Shimada, G. Nakane, N. Moriwaki, S. Chaya, T. Nakakuma, T. Matsuura, T. Sumi, and T. Otsuki, “A ferroelectric memory embedded in a RFID transponder with 2.4V operations and 10 year retention at 70oC,” IEEE International Conference on Consumer Electronics, Chicago, IL, June 1997, pp. 290-291.

  18. E. Fujii, T. Otsuki, Y. Judai, Y. Shimada, M. Azuma, Y. Uemoto, Y. Nagano, T. Nasu, Y. Izutsu, A. Matsuda, K. Nakao, K. Tanaka, K. Hirano, T. Ito, T. Mikawa, T. Kutsunai, L. D. McMillan, and C. A. Paz de Araujo, “Highly reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family),” IEEE International Electron Devices Meeting '97, Washington, DC, December 1997, pp. 597-600.

  19. T. Nasu, T. Otsuki, E. Fujii, Y. Shimada, M. Azuma, Y. Uemoto, S. Hayashi, K.Arita, Y. Nagano, Y. Izutsu, K. Tanaka, Y. Judai, K. Hirano, T. Ito, T. Mikawa, and T. Kutsunai, “Recent progress in ferroelectric nonvolatile memory technology with bismuth-layer structured thin films,” The 10th International Symposium on Integrated Ferroelectrics, Monterey, CA, March 1998.

  20. C. A. Paz de Araujo, L. D. McMillan, V. Joshi, N. Solayappan, M. Lim, K. Arita, N. Moriwaki, H. Hirano, T. Baba, Y. Shimada, T. Sumi, E. Fujii, and T. Otsuki, “The future of ferroelectric memories,” Dig. Tech. Pap. IEEE Int. Solid-State Circuit Conf., San Francisco CA, February 2000, pp.268-269.

  21. Y. Shimada, K. Arita, Y. Kato, K. Uchiyama, V. Joshi, and M. Lim, “A read-disturb-free ferroelectric gate FET memory,” The 12th International Symposium on Integrated Ferroelectrics, Aachen, March 2000.

  22. K. Uchiyama, K. Arita, Y. Shimada, S. Hayashi, E. Fujii, T. Otsuki, N. Solayappan, C. A. Paz de Araujo, “Low temperature crystallization of SrBi2Ta2O9 (SBT) films,” The 12th International Symposium on Integrated Ferroelectrics, Aachen, March 2000.

  23. Y. Shimada, Y. Kato, T. Yamada, K. Tanaka, T. Otsuki, Z. Chen, M. Lim, V. Joshi, L. McMillan, and C. A. Paz de Araujo, “High density and long retention non-destructive readout FeRAM using a linked cell architecture,” The 13th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 2001.

  24. K. Uchiyama, K. Tanaka, Y. Shimada, M. Azuma, T. Otsuki, N. Solayappan, V. Joshi, and C. A. Paz de Araujo, “Low temperature crystallization of MOCVD deposited SrBi2Ta2O9 (SBT) films,” The 13th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 2001.

  25. K. Tanaka, K. Uchiyama, M. Azuma, Y. Shimada, T. Otsuki, V. Joshi, and C. A. Paz de Araujo, “MOD preparation and characterization of BLT thin film,” The 13th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 2001.

  26. C. A. Paz de Araujo, L. D. McMillan, Z. Chen, Y. Shimada, Y. Kato, and T. Otsuki, “Ferroelectric linked cell device physics,” The 13th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 2001.

  27. K. Uchiyama, K. Tanaka, Y. Shimada, M. Azuma, and T. Otsuki, N. Solayappan, V. Joshi, and C. A. Paz de Araujo, “Ferroelectric properties of Bi layered perovskite deposited by metal-organic chemical vapor deposition (MOCVD),” The 13th International Conference on Crystal Growth, 03a-S11-11, Kyoto, July 2001, p. 433.

  28. Y. Shimada, “Polarization decay and hysteresis deformation in ferroelectric capacitors,” 1st International Meeting on Ferroelectric Random Access Memories, TO3-3, Gotemba, November 2001, pp. 35-36.

  29. K. Tanaka, T. Yoshikawa, M. Azuma, and Y. Shimada, “Ferroelectric characteristics of Bi4-xLaxTi3O12 thin films crystallized at 600oC by using a MOD technique,” 1st International Meeting on Ferroelectric Random Access Memories, Gotemba, November 2001, pp. 102-103.

  30. K. Tanaka, T. Uno, and Y. Shimada, “Ferroelectric characteristics of Bi4-xLaxTi3O12 thin films crystallized at low temperatures,” International Joint Conference on Applications of Ferroelectrics, Nara, May 2002, p.43.

  31. S. Narayan, V. Joshi, M. Lim, C. A. Paz de Araujo, L. D. McMillan, K. Uchiyama, and Y. Shimada, “Development of 500 Å thick MOCVD SBT films for 0.18 μm FeRAM process,” International Joint Conference on Applications of Ferroelectrics, Nara, May 2002, p.157.

  32. K. Uchiyama, S. Narayan, Y. Shimada, L. McMillan, and C. A. Paz de Araujo, “Low temperature crystallization of SrBi2Ta2O9 (SBT) in the ultra thin film region fabricated by MOCVD,” International Joint Conference on Applications of Ferroelectrics, Nara, May 2002, p.275.

  33. T. Uno, K. Tanaka, and Y. Shimada, “The grain growth mechanism of Bi4-xLaxTi3O12 thin films crystallized at low temperatures,” The 4th Japan-Korea Conference on Ferroelectrics, Osaka, August 2002, p.76.

  34. Y. Kato, T. Yamada, K. Tanaka, and Y. Shimada, “Non-switching readout of polarization states of a ferroelectric gate FET for unlimited number of read cycles,” 1st International Meeting for Future Electron Devices, Kansai, F-2, Osaka, July 2003, pp. 85-86.

  35. T. Yamada, Y. Kato, S. Koyama, and Y. Shimada, “Long-term stabilization in a non-destructive readout FeRAM by intentional modification of the polarization hysteresis curve for low voltage applications,” International Conference on Solid State Devices and Materials, B-1-4, Tokyo, September 2003, pp. 34-35.

  36. S. Koyama, Y. Kato, T. Yamada, and Y. Shimada, “Improvement of imprint characteristic using asymmetric programming in a NDRO FeRAM,” The 16th International Symposium on Integrated Ferroelectrics, 12-13-C, Gyongju, April 2004.

  37. S. Koyama, Y. Kato, T. Yamada, and Y. Shimada, “Improvement in reliability of a nondestructive readout FeRAM by asymmetrical programming,” 2nd International Meeting for Future Electron Devices, Kansai, D-5, Kyoto, July 2004, pp. 125-126.

  38. K. Kaibara, K. Tanaka, K. Uchiyama, and Y. Shimada, “Grain size and orientation analysis of SrBi2(Ta,Nb)2O9 films by electron backscatter diffraction,” 2nd International Meeting for Future Electron Devices, Kansai, D-6, Kyoto, July 2004, pp. 127-128.

  39. K. Kaibara, K. Tanaka, K. Uchiyama, and Y. Shimada, “Impact of the grain size and orientation of SrBi2(Ta,Nb)2O9 films on the polarization for nano-scale FeRAMs,” International Conference on Solid State Devices and Materials, D-1-5, Tokyo, September 2004, pp. 58-59.

  40. K. Kaibara, K. Tanaka, K. Uchiyama, Y. Kato, and Y. Shimada, “Effect of grain size and crystal orientation on the polarization of SrBi2(Ta,Nb)2O9 films,” The 17th International Symposium on Integrated Ferroelectrics, 3-2-C, Shanghai, April 2005.

  41. S. Koyama, Y. Kato, T. Yamada, and Y. Shimada, “Pulse driving of ferroelectric SBT capacitors in a nonvolatile flip-flop,” The 17th International Symposium on Integrated Ferroelectrics, 4-2-C, Shanghai, April 2005.

  42. Y. Kaneko, H. Tanaka, Y. Kato, and Y. Shimada, “Two-dimensional electron gas switching in an ultra thin epitaxial ZnO layer on a ferroelectric gate structure,” International Conference on Solid State Devices and Materials, J-8-2, Tsukuba, September 2007, pp. 1156-1157.

  43. Y. Kaneko, H. Tanaka, Y. Kato, and Y. Shimada, “A nonvolatile memory operation by ferroelectric modulation of interface conductance in a combinatorial oxide structure,” The 66th Annual Device Research Conference, III-2, The University of California, Santa Barbara, CA, June 23, 2008, pp. 59-60.

 

​

【３】国内学会・研究会等

 

（招待講演）

  1. 大槻達男、藤井英治、嶋田恭博、上本康裕、“強誘電体デバイスの特性とメモリへの応用（招待講演）,” 第116回ニューセラミックス懇話会･第96回センシング技術応用研究会合同研究会資料, 大阪府産総研,　4月 (1995).

  2. 上本康裕、吾妻正道、藤井英治、嶋田恭博、十代勇治、奈良肇、大槻達男、加納剛太、“強誘電体薄膜技術と不揮発メモリへの応用（招待講演）,” 第５６回応用物理学会学術講演会、26p-W-5、金沢 (1995).

  3. 吾妻正道、上本康裕、有田浩二、長野能久、林慎一郎、嶋田恭博、藤井英治、十代勇治、森脇信行、中根譲治、角辰巳、大槻達男、“強誘電体薄膜技術とデバイス応用（招待講演）,” 1995年電子情報通信学会エレクトロニクスソサイエティ大会、C-449、東京 (1995).

  4. 嶋田恭博、“強誘電体ゲートFETメモリの最新技術（招待講演）,” 応用物理学会関西支部　平成12年度第2回講演会、大阪 (2000).

  5. 嶋田恭博、“鉛フリー強誘電体を用いたＦｅＲＡＭ混載ＬＳＩの拓く世界（招待講演），”　2003年度新機能素子シンポジウム、東京, 10月(2003).

  6. 嶋田恭博、“強誘電体メモリーの開発と事業化プロセス（招待講演）,”映像情報メディア学会冬季大会 S1-3、東京　(2005).

 

（一般講演）

  1. 河原英仁、三木忠明、嶋田恭博、和迩浩一、尾形芳郎、“全コンデンサ内蔵形ＫｒＦエキシマレーザ,”　第４９回応用物理学会学術講演会、5a-Q-9、富山 (1988).

  2. 嶋田恭博、和迩浩一、三木忠明、河原英仁、尾形芳郎、“狭帯域ＫｒＦエキシマレーザの波長安定化,”　第４９回応用物理学会学術講演会、5p-Q-5、富山 (1988).

  3. 河原英仁、嶋田恭博、和迩浩一、尾形芳郎、笹田寿一、“ＫｒＦエキシマレーザにおけるガス組成の経時変化,” 第３６回応用物理学関係連合講演会、2p-Y-5, 千葉 (1989).

  4. 嶋田恭博、三升睦己、河原英仁、三木忠明、和迩浩一、尾形芳郎、“狭帯域ＫｒＦエキシマレーザの波長安定化 (II),”　第３６回応用物理学関係連合講演会、2p-Y-9、千葉 (1989).

  5. 和迩浩一、嶋田恭博、河原英仁、三升睦己、三木忠明、尾形芳郎、“自己インジェクション形共振器によるＫｒＦエキシマレーザの狭帯域発振 (I) － 発振特性,”　第５０回応用物理学会学術講演会、29p-ZK-12、福岡 (1989).

  6. 三升睦己、和迩浩一、嶋田恭博、河原英仁、三木忠明、尾形芳郎、“自己インジェクション形レーザ共振器によるＫｒＦエキシマレーザの狭帯域発振 (II) － エタロンの負荷特性,”　第５０回応用物理学会学術講演会、29p-ZK-13、福岡 (1989).

  7. 嶋田恭博、和迩浩一、三升睦己、河原英仁、三木忠明、尾形芳郎、"マルチミラー共振器を用いたKrFエキシマレーザの共振器内レーザ強度分布の解析," レーザー学会学術講演会第１０回年次大会、26aIV5、晴海 (1990).

  8. 嶋田恭博、三木忠明、三升睦己、小杉直貴、尾形芳郎、“CF4 不純物のKrFレーザー動作への影響,” レーザー学会学術講演会第１１回年次大会, 31pV7, 神戸 (1991).

  9. 嶋田恭博、三木忠明、三升睦己、小杉直貴、尾形芳郎、“KrFエキシマレーザーの均一分布損失とレーザー出力の向上,”　第３８回応用物理学関係連合講演会、28-p-E6、平塚 (1991).

  10. 小杉直貴、嶋田恭博、三木忠明、三升睦己、尾形芳郎、“可飽和インダクタによるKrFレ－ザの放電極性反転,” 第５２回応用物理学会学術講演会、11pL/III-6、岡山 (1991).

  11. 小杉直貴、嶋田恭博、三木忠明、松田明浩、和迩浩一、“極性交互反転によるKrFレ－ザの繰り返し発振,”　第３９回応用物理学関係連合講演会、29p-D-6, 習志野 (1992).

  12. 松田明浩、嶋田恭博、木部真樹、那須徹、藤井英治、“強誘電体薄膜へのKrFエキシマレーザー照射効果,”　第５３回応用物理学会学術講演会、17p-ZV-5、名古屋 (1992).

  13. 有田浩二、藤井英治、嶋田恭博、上本康裕、那須徹、井上敦雄、松田明浩、大槻達男、鈴岡信幸、“強誘電体コンデンサ内臓ＬＳＩプロセス,”　第１１回強誘電体応用会議、28-F-6、京都 (1994).

  14. 林慎一郎、上本康裕、嶋田恭博、吾妻正道、大槻達男、M. Huffman, L. McMillan, and C. Paz de Araujo、“LSMCVD法による強誘電体薄膜の作成と評価,” 第５５回応用物理学会学術講演会、20p-M-16、名古屋 (1994).

  15. 井上敦雄、嶋田恭博、藤井英治、上本康裕、吾妻正道、大槻達男、和田哲明、“集積化したBa0.7Sr0.3TiO3薄膜キャパシタの温度に依存した伝導機構,” 第４２回応用物理学関係連合講演会、28p-D-16、神奈川 (1995).

  16. Y. Shimada, A. Inoue, T. Nasu, K. Arita, Y. Nagano, A. Matsuda, Y. Uemoto, and E. Fujii, “Current transport mechanisms in integrated Ba0.7Sr0.3TiO3 thin film capacitors,” 12th Ferroelectric Material Applications, 26-TC-11, Kyoto, 1995.

  17. 長野能久、藤井英治、伊藤豊二、嶋田恭博、十代勇治、木部真樹、大槻達男、“強誘電体用Pt電極のエッチングメカニズム,” 第５７回応用物理学会学術講演会、7p-F-11、福岡 (1996).

  18. 松田明浩、中尾圭策、吾妻正道、嶋田恭博、大槻達男、伊東豊二、三河巧、十代勇治、“Y1系強誘電体膜のTDDB特性,” 第５７回応用物理学会学術講演会、9p-F-7、福岡 (1996).

  19. 中尾圭策、井上敦雄、吾妻正道、嶋田恭博、大槻達男、“Y1系強誘電体膜の電荷保持特性(I) リテンション特性,” 第５７回応用物理学会学術講演会、9p-F-9、福岡 (1996).

  20. 長野能久、藤井英治、伊藤豊二、嶋田恭博、十代勇治、木部真樹、大槻達男、“強誘電体メモリー用Pt電極のドライエッチング,” 第４６回電子セラミックス・プロセス研究会、新春特別講演会、新横浜 (1997).

  21. 中尾圭策、嶋田恭博、藤井英治、十代勇治、森脇信行、大槻達男、“Y1系強誘電体薄膜の特性とFeRAM応用,” 応用電子物性分科会誌 3, pp. 28-32 (1997).

  22. 大槻達男、藤井英治、嶋田恭博、“BLSF強誘電体メモリとその応用,” 第４４回応用物理学関係連合講演会、29p-S-8、船橋 (1997).

  23. Y. Shimada, A. Matsuda, K. Nakao, S. Chaya, N. Moriwaki, and T. Otsuki, “Retention characteristics of a ferroelectric memory based on SrBi2(Ta,Nb)2O9,” 14th Ferroelectric Material Applications, 31-TC-14, Kyoto, 1997, pp. 193-194.

  24. 田中圭介、中尾圭策、嶋田恭博、長野能久、藤井英治、大槻達男、“Y1系強誘電体における分極の薄膜化効果,” 第５８回応用物理学会学術講演会、4aPA/II-16、秋田 (1997).

  25. 田中圭介、中尾圭策、嶋田恭博、長野能久、藤井英治、大槻達男、“Y1系強誘電体キャパシタにおける分極のサイズ効果,” 第４５回応用物理学関係連合講演会、28a-Q-4、八王子 (1998).

  26. 林慎一郎、三河巧、藤井英治、嶋田恭博、十代勇治、大槻達男、N. Solayappan, L. D. McMillan, and C. A. Paz de Araujo, “LSMCD法で作製した1.5V駆動FeRAM用超薄膜層状強誘電体,” 第４５回応用物理学関係連合講演会、28p-Q-12、八王子 (1998).

  27. 中尾圭策、十代勇治、吾妻正道、嶋田恭博、大槻達男、“SrBi2(Ta,Nb)2O9キャパシタのデータ保持特性の評価,” 第１５回強誘電体応用会議、30-T-28、京都 (1998).

  28. 野間淳史、中尾圭策、長野能久、嶋田恭博、大槻達男、“電流-電圧特性評価によるSrBi2(Ta,Nb)2O9キャパシタのインプリント現象の検討,” 第４６回応用物理学関係連合講演会、29p-L-12、野田 (1999).

  29. 林慎一郎、嶋田恭博、藤井英治、大槻達男、“SBT系強誘電体LSMCD薄膜の現状,” 電子情報通信学会技術研究報告 ED98-241, pp. 15-19 (1999).

  30. 野間淳史、中尾圭策、嶋田恭博、大槻達男、“電流-電圧およびヒステリシス測定によるSrBi2(Ta,Nb)2O9キャパシタのインプリント現象の評価,” 第１６回強誘電体応用会議、29-T-45、京都 (1999).

  31. 嶋田恭博、野間淳史、大槻達男、“強誘電体キャパシタにおける分極減衰・ヒステリシス歪曲の温度依存性,” 電子情報通信学会技術研究報告 ED99-330, pp.25-30 (2000).

  32. 加藤剛久、嶋田恭博、“ゲートにSrBi2Ta2O9/CeO2を用いたMFIS構造のＦＥＴ特性,” 第６１回応用物理学会学術講演会、7p-G-1、北海道 (2000).

  33. 香山信三、加藤剛久、山田隆善、嶋田恭博、“非対称分極書き込みによる非破壊読み出しFeRAMのインプリント耐性改善，”　電情信学会2003年エレクトロニクスソサイエティ大会論文集２、C-11-8、新潟 (2003).

  34. 海原一裕、田中圭介、嶋田恭博、“EBSD法による多結晶強誘電体薄膜の微細結晶粒の方位評価，”第５１回応用物理学関係連合講演会、28p－ZL－4、八王子 (2004).

  35. 香山信三、加藤剛久、山田隆善、嶋田恭博、“非対称書き込みによる非破壊読み出し方型強誘電体メモリのインプリント耐性改善、”　電気学会研究会資料、電子材料研究会　EFM-04-1、東京 (2004).　

  36. 海原一裕、田中圭介、内山潔、加藤剛久、嶋田恭博、“電子線後方散乱回折法による強誘電体薄膜の結晶方位評価、”　電気学会C部門電子材料研究会強誘電体薄膜集積技術調査専門委員会、東京　(2004).

  37. 田中浩之、金子幸広、加藤剛久、嶋田恭博、“MOCVD法による(110)/(111)混在配向Bi4Ti3O12膜の低温形成、”　電気学会研究会資料、電子材料研究会　EFM-07-13、大阪 (2007).

  38. 金子幸広、田中浩之、加藤剛久、嶋田恭博、“酸化物エピタキシャル技術を用いた強誘電体ゲート薄膜トランジスタメモリ” 電子情報通信学会技術研究報告 ED2009-5, pp.17-22 (2009).

 

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【４】著 書

​​

  1. 嶋田恭博、「ＦｅＲＡＭ技術の基礎と技術課題」（ＥＤリサーチ社）ISBN4-901790-15-3、２００２年8月.

  2. 嶋田恭博、“強誘電体メモリーの基本動作と信頼性”、石原宏　監修　「強誘電体メモリーの新展開」　（シー・エム・シー出版）ISBN 4-88231-819-9、第７章, pp.54-63、２００４年２月．

  3. Y. Shimada, “Testing and reliability,” in Ferroelectric Random Access Memories, H. Ishiwara, M. Okuyama, and Y. Arimoto, eds., Topics in Applied Physics, Vol. 93, Springer-Verlag, Berlin Heidelberg, ISBN 3-540-40718-9 (2004), pp.177-194.

  4. 嶋田恭博、“強誘電体メモリーの基本動作と信頼性”、小柳光正　監修　「次世代半導体メモリの最新技術」　、（シー・エム・シー出版）ISBN978-4-88231-992-4、第４章の２、pp.141-162、２００９年２月．

  5. ​しまだ やすひろ「『とりあえず』就職するための本」（日本橋出版）ISBN978-4-434-28837-1、２０２１年６月

 

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【５】翻 訳 書

 

  1. Ｄ．シュロゥダー著、嶋田恭博訳、「半導体材料・デバイスの評価　― パラメータ測定と解析評価の実際 ―」、シー・エム・シー出版（2012年5月）583全頁：　原書 D.K. Schroder, “Semiconductor Device and Material Characterization,” 3rd Ed., 全740頁, John Wiley & Sons, Inc. c2006の全訳

 

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【６】一般業界誌等

 

  1. 嶋田恭博、“新展開を迎える強誘電体メモリ開発－ＩＣカードへの搭載で一気に実用化へ－”、「エレクトロニクス」（オーム社）、1996年11月号、pp. 18-20.

  2. 嶋田恭博、“強誘電体Ｙ－１メモリ実用化への道”、「BREAK THROUGH」（リアライズ社）、1998年1月号、No.139、pp. 7-11.

  3. 嶋田恭博、“強誘電体メモリーの基本動作と信頼性”、「機能材料」（シー・エム・シー出版）、2003年8月号、pp. 37-46.

 

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【７】調査・報告

 

  1. 新エネルギー・産業技術総合開発機構（NEDO) 平成１４年度課題設定型産業技術開発助成事業　「FeRAM（強誘電体不揮発性メモリ）製造技術の開発 (14度新ｴﾈ電情第0326001号)」事後評価報告書：プロジェクトコード P02074

 

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【８】学位論文

 

  1. Studies on Electrical and Reliability Characteristics of Ferroelectric Capacitors for Memory Applications (2003, 京都大学)

 

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【９】特　許

​　準備中

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